punch through - 穿隧效應半導體 - anti punch through implant原理
TWD 138.69
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穿透效應於金氧半場效電晶體之研究與應用
(punch through)機制使得汲極(Drain)到源極(Source)之通道產生永久性損壞，而成為寫入的操做方式。從實驗結果可發現利用穿透機制來寫入元件比傳統上用閘極氧化層崩潰所
Punch Through
Custom software development and design services for IoT devices, mobile apps, web apps, and the cloud. We specialize in BLE and connectivity challenges.
什麼是DIBL GIDL 另外punch through effect要怎麼解決我
什麼是DIBL GIDL 另外punch through effect要怎麼解決我覺得可以提升drain的摻雜濃度使depletion layer 減少，這樣就不會讓depletion layer 往source
半導體中的隧道效應
電荷穿隧過絕緣氧化層，稱為「打穿」（punch through），會導致閘極的破壞。近來，業界嘗試以高介電係數（high-k）材料取代以往的二氧化矽絕緣氧化層，以提高等效電容
Punch Through
Punch Through is a mechanic that allows weapons to shoot through a set distance of material, whether this material is cover, objects or enemies.
这几种MOS管“击穿”，你了解吗？
这个主要是Drain加反偏电压后，使得Drain/Bulk的PN结耗尽区延展，当耗尽区碰到Source的时候，那源漏之间就不需要开启就形成了通路，所以叫做穿通（punch